sot-23 plastic-encapsulate transistors 2SB624 transistor (pnp) features z high dc current gain. h fe :200 typ.(v ce =-1v,i c =-100ma) z complimentary to 2sd596. maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -30 v v ceo collector-emitter voltage -25 v v ebo emitter-base voltage -5 v i c collector current -continuous -700 ma p d total device dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified ) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100 a,i e =0 -30 v collector-emitter breakdown voltage v (br)ceo i c = -1ma, i b =0 -25 v emitter-base breakdown voltage v (br)ebo i e = -100 a, i c =0 -5 v collector cut-off current i cbo v cb =-30 v , i e =0 -0.1 a emitter cut-off current i ebo v eb = -5v , i c =0 -0.1 a h fe(1) * v ce = -1v,i c = -100ma 110 400 dc current gain h fe(2) * v ce =-1v,i c = -700ma 50 collector-emitter saturation voltage v ce(sat) * i c =-700 ma, i b = -70ma -0.6 v base-emitter voltage v be * v ce =-6v, i c =-10ma -0.6 -0.7 v transition frequency f t v ce = -6v,i c = -10ma 160 mhz collector output capacitance c ob v cb =-6v,i e =0,f=1mh z 17 pf * pulse test : pulse width 350 s,duty cycle 2%. classification of h fe (1) marking bv1 bv2 bv3 bv4 bv5 range 110-180 135-220 170-270 200-320 250-400 sot-23 1.base 2.emitter 3.collector a,may,2011 dongguan nanjing electronics ltd., a,may,2011
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